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| (R) STPS745D/F/G POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS A 7.5 A 45 V 175 C 0.57 V A K VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING INSULATED PACKAGE: ISOWATT220AC Insulating voltage = 2000V DC Capacitance = 12pF DESCRIPTION Single Schottky rectifier suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged either in TO-220AC, ISOWATT220AC or D2PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current = 0.5 Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Critical rate of rise of reverse voltage Parameter Repetitive peak reverse voltage K TO-220AC STPS745D K ISOWATT220AC STPS745F A NC D2PAK STPS745G Value 45 20 7.5 Unit V A A Tc = 160C TO-220AC / D2PAK ISOWATT220AC Tc = 145C tp = 10 ms sinusoidal IFSM 150 A IRRM IRSM Tstg Tj dV/dt *: tp = 2 s square F = 1kHz tp = 100 ms square 1 2 - 65 to + 175 175 10000 A A C C V/s Maximum operating junction temperature * dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j-a) dTj 1/7 June 1999 - Ed: 4D STPS745D/F/G THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case TO-220AC / D2PAK ISOWATT220AC Value 3.0 5.5 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Tests Conditions Tj = 25C Tj = 125C VF * Forward voltage drop Tj = 125C Tj = 25C Tj = 125C IF = 7.5 A IF = 15 A IF = 15 A 0.65 VR = VRRM 5 0.5 Min. Typ. Max. 100 15 0.57 0.84 0.72 Unit A mA V Pulse test : * tp = 380 s, < 2% To evaluate the conduction losses use the following equation : P = 0.42 x IF(AV) + 0.020 IF2(RMS) 2/7 STPS745D/F/G Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average current temperature ( = 0.5). versus ambient PF(av)(W) 6 5 4 3 2 1 IF(av) (A) 0 0 1 2 3 4 5 6 7 =tp/T T = 0.05 =1 = 0.1 = 0.2 = 0.5 IF(av)(A) 9 8 7 6 5 4 3 2 1 0 Rth(j-a)=Rth(j-c) TO-220A C ISOWATT220AB Rth(j-a)=15C/W Rth(j-a)=40C/W T tp =tp/T tp Tamb(C) 50 75 100 125 150 175 8 9 10 0 25 Fig. 3-1: Non repetitive surge peak forward current versus overload duration (maximum values) (TO-220AC and D2PAK). Fig. 3-2: Non repetitive surge peak forward current versus overload duration (maximum values) (ISOWATT220AC). IM(A) 120 100 80 60 40 IM IM(A) 80 70 60 50 Tc=50C Tc=100C Tc=50C 40 30 20 10 0 1E-3 Tc=100C Tc=150C IM t Tc=150C t 20 0 1E-3 =0.5 t(s) 1E-2 1E-1 1E+0 =0.5 t(s) 1E-2 1E-1 1E+0 Fig. 4-1: Relative variation of thermal transient impedance junction to case versus pulse duration (TO-220AC and D2PAK). Fig. 4-2: Relative variation of thermal transient impedance junction to case versus pulse duration (ISOWATT220AC). Zth(j-c)/Rth(j-c) Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 = 0.2 = 0.1 Single pulse = 0.5 1.0 0.8 0.6 0.4 T T = 0.5 0.2 tp(s) 1E-3 1E-2 =tp/T tp = 0.2 = 0.1 Single pulse tp(s) 0.0 1E-4 =tp/T tp 1E-1 1E+0 0.0 1E-3 1E-2 1E-1 1E+0 1E+1 3/7 STPS745D/F/G Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). Fig. 6: Junction capacitance versus reverse voltage applied (typical values). IR(A) 5E+4 1E+4 1E+3 1E+2 1E+1 Tj=25C Tj=150C Tj=125C Tj=100C Tj=75C Tj=50C C(pF) 1000 F=1MHz Tj=25C 500 200 VR(V) 30 35 40 45 1E+0 VR(V) 1E-1 0 5 10 15 20 25 100 1 2 5 10 20 50 Fig. 7: Forward voltage drop versus forward current (maximum values). Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35m). IFM(A) 100.0 Tj=125C Typical values Rth(j-a) (C/W) 80 70 60 Tj=25C 10.0 50 40 Tj=125C 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 30 20 10 0 0 2 4 6 S(Cu) (cm ) 8 10 12 14 16 18 20 4/7 STPS745D/F/G PACKAGE MECHANICAL DATA D2PAK (Plastic) REF. A E L2 C2 DIMENSIONS Millimeters Inches Min. Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20 8 Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 0 Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126 8 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40 0 A A1 A2 B B2 C D L L3 A1 B2 B G A2 C R C2 D E G L L2 M * V2 * FLAT ZONE NO LESSTHAN 2mm L3 M R V2 0.40 typ. 0.016 typ. FOOTPRINT DIMENSIONS (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 5/7 STPS745D/F/G PACKAGE MECHANICAL DATA TO-220AC DIMENSIONS REF. H2 C L5 OI L6 L2 D L7 A Millimeters Min. Max. 4.60 1.32 2.72 0.70 0.88 1.70 5.15 4.40 1.23 2.40 0.49 0.61 1.14 4.95 Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.194 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.202 A C D E F F1 G H2 L2 L9 F1 L4 10.00 10.40 16.40 typ. 13.00 2.65 15.25 6.20 14.00 2.95 15.75 6.60 0.393 0.409 0.645 typ. 0.511 0.104 0.600 0.244 0.551 0.116 0.620 0.259 F G M E L4 L5 L6 L7 L9 M Diam. I 3.50 3.93 2.6 typ. 3.75 3.85 0.137 0.154 0.102 typ. 0.147 0.151 6/7 STPS745D/F/G PACKAGE MECHANICAL DATA ISOWATT220AC A H B DIMENSIONS REF. A B D L7 Millimeters Min. Typ. Max. 4.40 2.50 2.40 0.40 0.75 1.15 4.95 10.00 16.00 28.60 15.90 9.00 3.00 4.60 2.70 2.75 0.70 1.00 1.70 5.20 Inches Min. Typ. Max. 0.173 0.098 0.094 0.016 0.030 0.045 0.195 0.630 0.181 0.106 0.108 0.028 0.039 0.067 0.205 0.409 1.205 0.646 0.366 0.126 L6 L2 L3 Diam E F F1 G H L2 L3 F1 10.40 0.394 30.60 1.125 16.40 0.626 9.30 3.20 0.354 0.118 F G D E L6 L7 Diam Type STPS745D STPS745F STPS745G STPS745G-TR Marking STPS745D STPS745F STPS745G STPS745G Package TO-220AC ISOWATT220AC D2PAK D2PAK Weight 1.86 g. 2 g. 1.48 g. 1.48 g. Base qty 50 50 50 1000 Delivery mode Tube Tube Tube Tape & reel Cooling method: by conduction (C) Recommended torque value: 0.55 N.m Maximum torque value: 0.7 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7 |
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